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Technical Documents

This section presents selected technical documents about the ACM model:

2023 - A 5-DC-parameter MOSFET model for circuit simulation in QucsStudio and Spectre

Abstract:

A minimalist MOSFET model for circuit simulation with only five DC parameters written in Verilog-A is presented. The five parameters can be extracted from direct and simple methods in common circuit simulators. The DC characteristics of transistors in both 180-nm bulk CMOS and 28-nm FD-SOI technologies generated by the five-parameter model are compared with those generated by the BSIM and UTSOI2 models, respectively. The simulation of some basic circuits using the proposed 5-DC-parameter MOSFET model shows good matching with the simulation using the BSIM model, for the benefit of a much a simpler set of DC parameters.

2022 - Bridging the gap between design and simulation of low-voltage CMOS circuits

Abstract:

This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced compact MOSFET (ACM) model and was implemented in Verilog-A to simulate different circuits designed with the ACM model in Verilog-compatible simulators. Being able to simulate MOS circuits through the same model used in a hand design benefits designers in understanding how the main MOSFET parameters affect the design. Herein, the classic CMOS inverter, a ring oscillator, a self-biased current source and a common source amplifier were designed and simulated using either the 4PM or the BSIM model. The four-parameter model was simulated in many sorts of circuits with very satisfactory results in the low-voltage cases. As the ultra-lowvoltage (ULV) domain is expanding due to applications, such as the internet of things and wearable circuits, so is the use of a simplified ULV MOSFET model.

2018 - The compact all-region MOSFET model theory and applications

Abstract:

A compact presentation of the basic theory of the MOS transistor is given. Instead of the usual approach of furnishing separate analytical formulas for the strong and weak inversion regions of the MOS transistor, we provide simple formulas which are valid in all operating regions, including moderate inversion. We review ultra-low-power circuits operating near the threshold condition that allows the automatic extraction of the specific current IS and the threshold voltage VT of MOS transistors, which are the most fundamental parameters for technology characterization, circuit design, and testing.

2000 - Advanced compact model for short-channel MOS transistors

Abstract:

This paper introduces the advanced compact MOSFET (ACM) model, a physically based model of the MOS transistor, derived from the long-channel transistor model presented in (1). The ACM model is composed of very simple expressions, is valid for any inversion level, conserves charge > > and preserves the source-drain symmetry of the transistor. Short-channel effects are included using a compact and physical approach. The performance of the ACM model in benchmark tests demonstrates its suitability for circuit simulation.